IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

PD - 9.1130 IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

📥 Download Datasheet

IRGBC20K-S Datasheet Preview — Preview of IRGBC20K-S PDF

Datasheet Specifications

Part number: IRGBC20K-S
Manufacturer: International Rectifier
File Size: 171.22 KB
Datasheet: IRGBC20K-S-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses
* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast Fast IGBT VCES = 600V VCE(sat) ≤ 3.5V @VGE

Applications

* These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. SMD-220 Max. 600 10 6.0 20 20 10 ±20 5.0 60 24 -55 to +150 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EA

IRGBC20K-S Distributors

📁 Related Datasheet

IRGB4620DPbF IRGB4630DPbF IRGB4640DPbF IRG4BC20F IRG4BC20FD IRG4BC20FD-S

📌 All Tags

IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGBC20K-S-like datasheet