IRGBC20F - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGBC20F Datasheet Preview — Preview of IRGBC20F PDF

Datasheet Details

Part number	IRGBC20F
Manufacturer	International Rectifier ↗
File Size	159.24 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGBC20F-InternationalRectifier.pdf

IRGBC20F Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.8V @VGE = 15V, IC = 9.0A n-channel.

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Published: Jul 12, 2014 |