IRGB5B120KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGB5B120KDPBF
Manufacturer	International Rectifier
File Size	308.45 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB5B120KDPBF_InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA. www. DataSheet4U. com.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
TO-220 Package.
Lead-Free C VCES = 1200V IC = 6.0A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 2.75V Benefits.
Benchmark Efficiency for Motor Control.
Rugged T.

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Published: May 8, 2010 |