IRGB30B60KPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGB30B60KPBF
Manufacturer	International Rectifier
File Size	349.14 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB30B60KPBF_InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Pa.

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Published: Jun 5, 2007 |