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IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR

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Description

PD -94908A IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number
IRG4BC20MDPbF
Manufacturer
International Rectifier
File Size
314.62 KB
Datasheet
IRG4BC20MDPbF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

Features

* Rugged: 10µsec short circuit capable at VGS=15V

Applications

* IGBT Co-packaged with ultra-soft-recovery antiparallel diode
* Industry standard TO-220AB package
* Lead-Free G C Fast IGBT VCES = 600V VCE(on) typ. = 1.85V Benefits
* Offers highest efficiency and short circuit capability for intermediate applications

IRG4BC20MDPbF Distributors

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