IRG4BC20MD-S INSULATED GATE BIPOLAR TRANSISTOR

IRF

Description

PD -94116 IRG4BC20MD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number: IRG4BC20MD-S
Manufacturer: IRF
File Size: 200.73 KB
Datasheet: IRG4BC20MD-S_IRF.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Rugged: 10µsec short circuit capable at VGS=15V

Applications

* IGBT Co-packaged with ultra-soft-recovery antiparallel diode
* Industry standard D2Pak package C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 11A Benefits
* Offers highest efficiency and short circuit capability for intermediate ap

IRG4BC20MD-S Distributors

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IRG4BC20MD-S INSULATED GATE BIPOLAR TRANSISTOR IRF

IRF IRG4BC20MD-S-like datasheet