IRFIZ48V - Power MOSFET

International Rectifier

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Datasheet Details

Part number	IRFIZ48V
Manufacturer	International Rectifier
File Size	93.31 KB
Description	Power MOSFET
Datasheet	IRFIZ48V_InternationalRectifier.pdf

IRFIZ48V Product details

Description

l l D VDSS = 60V RDS(on) = 12mΩ G S ID = 39A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 Fullpak eliminates the need for additional

Features

OTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M A M B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112) 2.65 (.104) M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189) Part Marking Information TO-220 Fullpak E X A M P L E : T H IS IS A N IR F I8 4 0 G W ITH.

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Published: Apr 16, 2005 |