IRFH7004PBF Datasheet (International Rectifier)

IRFH7004PBF, HEXFET Power MOSFET

StrongIRFET IRFH7004PbF Applications l l l l l l l l l HEXFET® Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters VDSS RDS(on) typ.

max.

ID (Silicon Limited) ID (Package Limited) 40V 1.1mΩ 1.4mΩ 259A 100A c Benefits l l l l Improved Gate, Avalanche and Dynamic

IRFH7004PBF Features

* 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 0.001 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Δ Tj = 125°C and Tstart =25°C