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IRFH4226PBF - Power MOSFET

Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the compon

Features

  • Low Charge (typical 16 nC) Low RDSon (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 2.4 3.3 16 70 V m nC A   Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters FastIRFET™ IRFH4226PbF HEXFET® Power MOSFET   PQFN 5X6 mm Features Low Charge (typical 16 nC) Low RDSon (<2.4 m) Low Thermal Resistance to PCB (<2.7 °C/W) Low Profile (<0.
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