IRFB9N60A Datasheet (International Rectifier)

IRFB9N60A, Power MOSFET

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation level

IRFB9N60A Features

* (.55 5) 1 3.47 (.53 0) 4 .0 6 (.160 ) 3 .5 5 (.140 ) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0 .9 3 (.0 37 ) 0 .6 9 (.0 27 ) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0.36 (.0 14 ) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O