IRFB3607GPBF Datasheet - International Rectifier

IRFB3607GPBF Power MOSFET

PD - 96329 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFB3607GPbF HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free S VDSS RDS(on) typ. max. ID D 75V 7.34m 9.0m 80A : : G D S TO-220AB IRFB3607GP.

IRFB3607GPBF Features

* ures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C i

IRFB3607GPBF Datasheet (388.75 KB)