IRFB3004GPbF Datasheet (International Rectifier)

IRFB3004GPbF, Power MOSFET

PD - 96237 IRFB3004GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free VDSS RDS(on) typ.

max.

ID (Silicon Limited) ID (Package Limited) D 40V 1.4mΩ 1.75mΩ

IRFB3004GPbF Features

* e Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not