IRFB3256PbF - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRFB3256PbF
Manufacturer	International Rectifier ↗
File Size	264.31 KB
Description	HEXFET Power MOSFET
Datasheet	IRFB3256PbF-InternationalRectifier.pdf

ower dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 15. Maximum.

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Published: Oct 16, 2015 |