IRFB3206GPbF Datasheet (International Rectifier)

IRFB3206GPbF, HEXFET Power MOSFET

PD - 96210 IRFB3206GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free HEXFET® Power MOSFET D VDSS RDS(on) typ.

max.

ID (Silicon Limited) 60V 2.4m: 3.0m: c210A S ID (Package Li

IRFB3206GPbF Features

* r in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakd