IRF8327SPBF Datasheet (International Rectifier)

IRF8327SPBF, Power MOSFET

The IRF8327SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET® package is compatible with existing layout geometries

IRF8327SPbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested DirectFET® Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 5.1mΩ@ 10V 8

IRF8327SPBF Features

* 1 VGS = 0V 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 50 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 250 200 150 Typical VGS(th) Gate threshold