IRF8301MTRPBF - Power MOSFET

International Rectifier

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Datasheet Details

Part number	IRF8301MTRPBF
Manufacturer	International Rectifier
File Size	353.67 KB
Description	Power MOSFET
Datasheet	IRF8301MTRPBF-InternationalRectifier.pdf

IRF8301MTRPBF Product details

Description

The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile.

Features

00 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 01 10 100 VDS, Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area 3.0 Typical VGS(th) Gate threshold Voltage (V) 160 2.5 120 2.0 80 40 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 13. Maximum Drain Current vs. Case Temperature 1200 1000 800 1.5 ID = 100µA ID = 150µA ID = 250µA 1.0 ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 14. Typical Threshold Voltage vs. Junction Temperature.

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Published: Sep 14, 2015 |