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IRF8308MTRPbF - POWER MOSFET

Download the IRF8308MTRPbF datasheet PDF (IRF8308MPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF8308MPbF ISD, Reverse Drain Current (A) ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000.0 100.0 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 150 ID, Drain-to-Source Current (A) 1000 100.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF8308MPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IRF8308MPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters 28nC 8.2nC 3.5nC 34nC 20nC 1.8V l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested Applicable DirectFET Outline and Substrate Outline (see p.
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