IRF830APBF - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF830APBF
Manufacturer	International Rectifier
File Size	187.57 KB
Description	HEXFET Power MOSFET
Datasheet	IRF830APBF_InternationalRectifier.pdf

CODE YEAR 7 = 1997 WEEK 19 LINE C Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 18mH RG = 25Ω, IAS = 5.0A. (See Figure 12) ISD ≤ 5.0A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Data and specifications subject to change without notice. IR WORLD.

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Published: May 28, 2007 |