IRF7832 - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF7832
Manufacturer	International Rectifier
File Size	259.66 KB
Description	HEXFET Power MOSFET
Datasheet	IRF7832_InternationalRectifier.pdf

age has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage. 8 Synchronous FET.

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Published: Apr 16, 2005 |