IRF7805 - N-Channel Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF7805
Manufacturer	International Rectifier
File Size	194.08 KB
Description	N-Channel Power MOSFET
Datasheet	IRF7805_InternationalRectifier.pdf

These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

IRF7805 IRF7805A Vds 30V 30V Rds(on) 11mΩ 11mΩ Qg 31nC 31nC Qsw 11.5nC Qoss 36nC 36nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current TJ, TSTG IS ISM 2.5 106 25°C 70°C IDM PD Symbol VDS VGS ID 13 10 100 2.5 1.6.
55 to 150 2.5 106 °C A IRF7805 30 ±12 13 10 100 W A IR.

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Published: Apr 16, 2005 |