IRF7749L2PBF Datasheet (International Rectifier)

IRF7749L2PBF, Power MOSFETs

The IRF7749L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

The DirectFET package is compatible with existing layou

l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Industrial Qualified IRF7749L2PbF DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS 60V min Qg tot VGS ±20V max Qgd RDS(o

IRF7749L2PBF Features

* g 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical Total Gate Charge vs Gate-to-Source Voltage 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 6, 2014 IRF7749L2PbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energ