IRF7749L1TRPBF Datasheet (International Rectifier)

IRF7749L1TRPBF, Power MOSFETs

The IRF7749L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

The DirectFET package is compatible with existing layout ge

IRF7749L1TRPbF Applications l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Industrial Qualified Applicable DirectFET Outline and Substrate Outline DirectFET Power MOSFET Typical values (unle

IRF7749L1TRPBF Features

* e (nC) Fig 9. Typical Total Gate Charge vs Gate-to-Source Voltage February 18, 2013 IRF7749L1TRPbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C TJ = 25°C 10 TJ = -40°C VGS = 0V 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drai