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IRF7241PbF - Power MOSFET

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IRF7241PbF Product details

Description

S1 8 A D New trench HEXFET® Power MOSFETs from S 2 International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance S 3 7D 6D per silicon area.This benefit, combined with the ruggedized device design that HEXFET power G 4 5D MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use Top View in battery and load management applications.SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID

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