Datasheet4U Logo Datasheet4U.com

IRF7240 - Power MOSFET

Description

achieve the extremely low on-resistance per silicon area.

extremely efficient device for use in battery and load G 4 management applications..

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF7240TRPBF P-Channel MOSFET VBsemi
IRF720 N-Channel Mosfet Transistor Inchange Semiconductor
IRF720 N-Channel Power MOSFET Samsung semiconductor
IRF720 N-Channel Power MOSFET Intersil Corporation
IRF720 Power MOSFET Vishay

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7240PBF HEXFET Power MOSFET
IRF7241 HEXFET Power MOSFET
IRF7241PbF Power MOSFET
IRF720 N-Channel Power MOSFET
IRF7201 HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -40V PD- 95253 IRF7240PbF HEXFET® Power MOSFET RDS(on) max 0.015@VGS = -10V 0.025@VGS = -4.5V ID -10.5A -8.4A Description S 1 These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to S 2 achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an S 3 extremely efficient device for use in battery and load G 4 management applications.. A 8 D 7 D 6 D 5 D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
Published: |