IRF6810STRPBF - Power MOSFET

International Rectifier

IRF6810STRPBF Datasheet Preview — Preview of IRF6810STRPBF PDF

Datasheet Details

Part number	IRF6810STRPBF
Manufacturer	International Rectifier ↗
File Size	293.45 KB
Description	Power MOSFET
Datasheet	IRF6810STRPBF-InternationalRectifier.pdf

IRF6810STRPBF Product details

Description

The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25μA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 220 EAS , Single Pulse Avalanche Energy (mJ) 200 180 160 140 120 100 80 60 40 20 0 25 50 75 ID TOP 1.6A 2.4A BOTTOM 13A 100 Typical VGS(th) Gate th.

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Published: Apr 1, 2014 |