Description
The IRF6715MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.
Features
- 1. Maximum Safe Operating Area
ID, Drain Current (A)
200 180 160 140 120 100
80 60 40 20
0 25 50 75 100 125 150 TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
900
800
700
600
3.0
Typical VGS(th) Gate threshold Voltage (V)
2.5
2.0
1.5
ID = 100µA ID = 250µA
ID = 1.0mA
1.0 ID = 1.0A
0.5 -75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP 2.74A
3.70A BOTTOM 27A
EAS , Single Pulse Avala.