IRF6715MPbF Datasheet (International Rectifier)

IRF6715MPbF, Power MOSFET

The IRF6715MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

The DirectFET package is compatible with existing layout geometries us

PD - 96117C IRF6715MPbF IRF6715MTRPbF DirectFET Power MOSFET l RoHs Compliant and Halogen Free l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.3mΩ@ 10V 2.1mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching 40nC 12.0nC 5.3nC 37nC 26nC 1.9V l Ideal for CPU Core DC-DC Converters l Optimized for Sync.

FET socket of Syn

IRF6715MPbF Features

* 1. Maximum Safe Operating Area ID, Drain Current (A) 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 900 800 700 600 3.0 Typical VGS(th) Gate threshold Voltage (V) 2.5 2.0 1.5 ID = 100µA ID = 250µA ID =