IRF6691PBF Datasheet (International Rectifier)

IRF6691PBF, Power MOSFET

The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used

PD - 97204 PROVISIONAL l l l l l l l l l RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques Typical values (unless otherwise specified) DirectFET Power MOSFET RDS(on) Qrr 26nC IRF6691PbF IRF6691TRPbF RDS(on) Vgs(th) 2.0V VDSS tot VGS 20V max ±12V max 1.2mΩ@ 10V 1.8mΩ@

IRF6691PBF Features

* , Reverse Drain Current (A) 100 100µsec 10 T A = 25°C Tj = 150°C Single Pulse 1 0 1 10 1msec 1 0.0 0.2 0.4 0.6 0.8 VGS = 0V 1.0 1.2 10msec 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage 200 Fig10. Maximum Safe Opera