Description
The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- msec
10msec
1
0.1 TA = 25°C TJ = 150°C Single Pulse
0.01
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
14 6.0 ID = 150µA
12 ID = 250µA 5.0 ID = 1.0mA
10 ID = 1.0A
8
4.0
6
4 3.0
2
0 25 50 75 100 125 150 TA , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
1000 900 800 700
2.0 -75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fi.