Datasheet Details
Part number:
IRF6641TRPBF
Manufacturer:
International Rectifier
File Size:
282.73 KB
Description:
N-channel hexfet power mosfet.
IRF6641TRPBF_InternationalRectifier.pdf
Datasheet Details
Part number:
IRF6641TRPBF
Manufacturer:
International Rectifier
File Size:
282.73 KB
Description:
N-channel hexfet power mosfet.
IRF6641TRPBF, N-Channel HEXFET Power MOSFET
The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries
www.DataSheet4U.com PD - 97262 IRF6641TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l VDSS Qg tot VGS Qgd 9.5nC RDS(on) 51mΩ@
IRF6641TRPBF Features
* = 150°C Single Pulse 1 10 100 1msec 1000 Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) , Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 6.0 VDS, Drain-to-Source Voltage (V) 5 4 ID, Drain Current (A) 5.0 3 4.0 ID ID ID ID = 150µA = 250µA = 1.0mA = 1.0A 2
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