IRF6629TRPBF, IRF6629PBF - DirectFET Power MOSFET

International Rectifier

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IRF6629TRPBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF6629TRPBF, IRF6629PBF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IRF6629TRPBF, IRF6629PBF
Manufacturer	International Rectifier
File Size	299.19 KB
Description	DirectFET Power MOSFET
Datasheet	IRF6629PBF_InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRF6629TRPBF, IRF6629PBF. Please refer to the document for exact specifications by model.

IRF6629TRPBF Product details

Description

The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

orward Voltage 200 180 160 ID, Drain Current (A) 3.0 Typical VGS(th) Gate threshold Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 1.5 ID = 100µA ID = 250µA 1.0 ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 5000 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Thre.

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Published: Jan 17, 2009 |