IRF6626 - DirectFET Power MOSFET

International Rectifier

IRF6626 Datasheet Preview — Preview of IRF6626 PDF

Datasheet Details

Part number	IRF6626
Manufacturer	International Rectifier ↗
File Size	658.97 KB
Description	DirectFET Power MOSFET
Datasheet	IRF6626_InternationalRectifier.pdf

IRF6626 Product details

Description

The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

0 0.01 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 80 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Current (A) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 100 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltag.

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Published: Mar 9, 2007 |