IRF6621PbF - Power MOSFET

International Rectifier

IRF6621PbF Datasheet Preview — Preview of IRF6621PbF PDF

Datasheet Details

Part number	IRF6621PbF
Manufacturer	International Rectifier ↗
File Size	252.22 KB
Description	Power MOSFET
Datasheet	IRF6621PbF-InternationalRectifier.pdf

IRF6621PbF Product details

Description

The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

0.1 1.0 10.0 100.0 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 50 40 2.0 ID = 250µA 30 20 1.5 10 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 60 50 40 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 3.0A 4.3A.

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Published: Aug 25, 2015 |