IRF5EA1310 Datasheet (International Rectifier)

IRF5EA1310, POWER MOSFET

PD-93977 HEXFET® POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number IRF5EA1310 BVDSS IRF5EA1310 100V, N-CHANNEL 100V RDS(on) 0.036Ω ID 23A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely

IRF5EA1310 Features

* n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt T