IRF5851PbF Datasheet (International Rectifier)

IRF5851PbF, Power MOSFET

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

This Dual TSOP-6 p

IRF5851PbF Features

* n Diode Forward Voltage www.irf.com -ID , Drain Current (A) 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100us 1ms 1 10ms TTJA = = 25 ° C 150 ° C Single Pulse 0.1 0.1 1 10 -VDS , Drain-to-Source Voltage (V) 100 Fig 23. Maximum Safe Operating Area 9 IRF5851PbF P-Channel -ID ,