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PD- 94086
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF5802
HEXFET® Power MOSFET RDS(on) max 1.2Ω@VGS = 10V ID
0.9A
VDSS
150V
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
D
1
6
D
D
2
5
D
G
3
4
S
TSOP-6
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
0.9 0.
IRF5802 Datasheet
