IRF3717PBF - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF3717PBF
Manufacturer	International Rectifier
File Size	213.98 KB
Description	HEXFET Power MOSFET
Datasheet	IRF3717PBF_InternationalRectifier.pdf

Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ra.

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Published: Jun 4, 2007 |