Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
silicon area.This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides
Features
- . T for P-Channel
Driver Gate Drive
P. W. Period
D=
P. W. Period
[VGS=10V ].
- D. U. T. ISD Waveform
Reverse Recovery Current
Body Diode Forward
Current di/dt
D. U. T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied Voltage
Body Diode Inductor Curent
Forward Drop
Ripple ≤ 5%
[VDD] [ISD].
- VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs
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