IRF3710SPBF - Power MOSFET

International Rectifier

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Datasheet Details

Part number	IRF3710SPBF
Manufacturer	International Rectifier
File Size	315.12 KB
Description	Power MOSFET
Datasheet	IRF3710SPBF-InternationalRectifier.pdf

IRF3710SPBF Product details

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides

Features

. T for P-Channel Driver Gate Drive P. W. Period D= P. W. Period [VGS=10V ].
D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD].
VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 www. irf. com © 2013 International Rectifier Submit Datasheet Feedback November 1.

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Published: Oct 18, 2015 |