IRF1407LPbF, IRF1407SPbF - Power MOSFETs

International Rectifier

IRF1407LPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF1407LPbF, IRF1407SPbF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IRF1407LPbF, IRF1407SPbF
Manufacturer	International Rectifier ↗
File Size	246.29 KB
Description	Power MOSFETs
Datasheet	IRF1407SPbF-InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRF1407LPbF, IRF1407SPbF. Please refer to the document for exact specifications by model.

IRF1407LPbF Product details

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides

Features

1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 Fig 15. Typical Avalanche Current Vs. Pulsewidth 1.0E-01 EAR , Avalanche Energy (mJ) 400 300 200 100 0 25 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 78A 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tj.

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Published: Oct 13, 2015 |