IRF1407S - Power MOSFET

International Rectifier

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Datasheet Details

Part number	IRF1407S
Manufacturer	International Rectifier
File Size	159.79 KB
Description	Power MOSFET
Datasheet	IRF1407S_InternationalRectifier.pdf

IRF1407S Product details

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provide

Features

Fig 15. Typical Avalanche Current Vs. Pulsewidth 400 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 10% Duty Cycle ID = 78A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Av.

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Published: Apr 16, 2005 |