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PD - 94002
IRF7751
HEXFET® Power MOSFET
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Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel
VDSS
-30V
RDS(on) max
35mΩ@VGS = -10V 55mΩ@VGS = -4.5V
ID
-4.5A -3.8A
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2
signer with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
F7751 Datasheet
