Datasheet4U Logo Datasheet4U.com

F7338 - IRF7338

Datasheet Summary

Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

Features

  • imum Avalanche Energy Vs. Drain Current 8 www. irf. com www. DataSheet4U. com P-Channel 800 IRF7338 ID= -2.9A -V GS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds.

📥 Download Datasheet

Datasheet preview – F7338

📁 Similar Datasheet

  • F7304 - Dual P-Channel 30V MOSFET (VBsemi)
  • F7316 - Dual P-Channel MOSFET (VBsemi)
  • F7342 - Dual P-Channel 60V MOSFET (VBsemi)
  • F7343Q - N- and P-Channel MOSFET (VBsemi)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 94372C IRF7338 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 D1 D1 N-Ch VDSS 12V P-Ch -12V 3 6 D2 D2 4 5 P-CHANNEL MOSFET RDS(on) 0.034Ω 0.150Ω Top View Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
Published: |