Datasheet Details
- Part number
- F7338
- Manufacturer
- International Rectifier
- File Size
- 227.37 KB
- Datasheet
- F7338_InternationalRectifier.pdf
- Description
- IRF7338
F7338 Description
www.DataSheet4U.com PD - 94372C IRF7338 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in.
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silic.
F7338 Features
* imum Avalanche Energy Vs. Drain Current
8
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P-Channel
800
IRF7338
ID= -2.9A
-V GS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd
12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V
600
C, Capacitance (pF)
Ci
F7338 Applications
* This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pac
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