N0132S Process Geometry

InterFET

Description

InterFET Product Folder Technical Support Order Now N0132S N0132S Process Geometry .
The InterFET N0132S Geometry is ideal for low noise high gain applications.

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Datasheet Specifications

Part number: N0132S
Manufacturer: InterFET
File Size: 362.45 KB
Datasheet: N0132S-InterFET.pdf
Description: Process Geometry

Features

* Low Noise: 1.2 nV/√Hz Typical
* Typical Input Capacitance: 13pF
* Typical Breakdown Voltage: -45V
* High Input Impedance
* Small Die: 518um X 518um X 203um
* Bond Pads: 90um X 90um
* Substrate Connected to Gate
* Au Back-Side Finish A

Applications

* Low Noise Amplifier
* Audio Amplifiers
* Mid to High-Gain Applications
* Matched Pair Applications

N0132S Distributors

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N0132S Process Geometry InterFET

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