N0132H Process Geometry

InterFET

N0132H Description

InterFET Product Folder Technical Support Order Now N0132H N0132H Process Geometry .
The InterFET N0132H Geometry is ideal for low noise high gain applications.

N0132H Features

* Low Noise: 1.5 nV/√Hz Typical
* Typical Input Capacitance: 12pF
* Typical Breakdown Voltage: -60V
* High Input Impedance
* Small Die: 518um X 518um X 203um
* Bond Pads: 90um X 90um
* Substrate Connected to Gate
* Au Back-Side Finish A

N0132H Applications

* Low Noise Amplifier
* Audio Amplifiers
* Mid to High-Gain Applications
* Matched Pair Applications

📥 Download Datasheet

N0132H Datasheet Preview — Preview of N0132H PDF

Datasheet Details

Part number: N0132H
Manufacturer: InterFET
File Size: 360.32 KB
Datasheet: N0132H-InterFET.pdf
Description: Process Geometry

📁 Related Datasheet

N0131SH120 - Phase Control Thyristor (IXYS)
N0131SH160 - Phase Control Thyristor (IXYS)
N0131SJ120 - Phase Control Thyristor Stud (IXYS)
N0131SJ160 - Phase Control Thyristor Stud (IXYS)
N0118GA - SCR (WeEn)
N0180SH120 - Phase Control Thyristor (IXYS)
N0180SH140 - Phase Control Thyristor (IXYS)
N0180SH160 - Phase Control Thyristor (IXYS)

📌 All Tags

Process Geometry InterFET

InterFET N0132H-like datasheet

N0132S - Process Geometry