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N0132H Process Geometry

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Description

InterFET Product Folder Technical Support Order Now N0132H N0132H Process Geometry .
The InterFET N0132H Geometry is ideal for low noise high gain applications.

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Datasheet Specifications

Part number
N0132H
Manufacturer
InterFET
File Size
360.32 KB
Datasheet
N0132H-InterFET.pdf
Description
Process Geometry

Features

* Low Noise: 1.5 nV/√Hz Typical
* Typical Input Capacitance: 12pF
* Typical Breakdown Voltage: -60V
* High Input Impedance
* Small Die: 518um X 518um X 203um
* Bond Pads: 90um X 90um
* Substrate Connected to Gate
* Au Back-Side Finish A

Applications

* Low Noise Amplifier
* Audio Amplifiers
* Mid to High-Gain Applications
* Matched Pair Applications

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