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28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase
Y Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program
Y 100 000 Erase Program Cycles
Y 12 0V g5% VPP Y High-Performance Read
65 ns Maximum Access Time
Y CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standby Current 0 Watts Data Retention Power
Y Integrated Program Erase Stop Timer
Y Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface
Y Noise Immunity Features g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing
Y ETOXTM Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience
Y JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSO
F28F010 Datasheet
