F28F020
Features
±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX™ Nonvolatile Flash Technology EPROM-patible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP
(See Packaging Spec., Order #231369)
Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 µS Typical Byte-Program 4 second Chip-Program 100,000 Erase/Program Cycles High-Performance Read 90 ns Maximum Access Time CMOS Low Power Consumption 10 m A Typical Active Current 50 µA Typical Standby Current 0 Watts Data Retention Power Integrated Program/Erase Stop Timer n
Extended Temperature Options
Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a...
