Description
The ISSI IS61VF51232, IS61VF51236, and IS61VF10018
are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.The IS61VF51232 is organized as 524,288 words by 32 bits and the IS61VF51236 is organized as 524,288 words by 36 bits.The IS61VF10018 is organized as 1,048,576 words by 18 bits.Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, an
Features
- Internal self-timed write cycle.
- Individual Byte Write Control and Global Write.
- Clock controlled, registered address, data and control.
- Linear burst sequence control using MODE input.
- Three chip enable option for simple depth expansion and address pipelining.
- Common data inputs and data outputs.
- JEDEC 100-Pin TQFP and 119-pin PBGA package.
- Single +2.5V, ±5% operation.
- Auto Power-down during deselect.
- Sing.