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IS49RL36160 - 1 Meg x 36 x 16 Banks RLDRAM

Download the IS49RL36160 datasheet PDF. This datasheet also covers the IS49RL18320 variant, as both devices belong to the same 1 meg x 36 x 16 banks rldram family and are provided as variant models within a single manufacturer datasheet.

Description

8 General Notes 8 State Diagram 9 Functional Block Diagrams 10 Ball Assignments and Descriptions 12 Package Dimensions 16 Electrical Characteristics IDD Specifications 17 Electrical Specifications Absolute Ratings and I/O Capacitance

Features

  • 1066 MHz DDR operation (2133 Mb/s/ball data rate).
  • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency).
  • Organization.
  • 32 Meg x 18, and 16 Meg x 36 common I/O (CIO).
  • 16 banks.
  • 1.2V center-terminated push/pull I/O.
  • 2.5V V EXT , 1.35V V DD , 1.2V V DDQ I/O.
  • Reduced cycle time (tRC (MIN) = 8 - 12ns).
  • SDR addressing.
  • Programmable READ/WRITE latency (RL/WL) and burst length.
  • Data mas.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS49RL18320-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RLDRAM 3 IS49RL18320– 2 Meg x 18 x 16 Banks IS49RL36160– 1 Meg x 36 x 16 Banks Features • 1066 MHz DDR operation (2133 Mb/s/ball data rate) • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency) • Organization – 32 Meg x 18, and 16 Meg x 36 common I/O (CIO) – 16 banks • 1.2V center-terminated push/pull I/O • 2.5V V EXT , 1.35V V DD , 1.
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