Datasheet Details
- Part number
- VTSU01900
- Manufacturer
- Innogration
- File Size
- 859.64 KB
- Datasheet
- VTSU01900-Innogration.pdf
- Description
- RF Power N-channel MOSFET
VTSU01900 Description
Innogration (Suzhou) Co., Ltd.900W, 100V RF Power N-channel MOSFETs .
The VTSU01900 is a 900-watt, N-channel MOSFETs, designed for pulsed or CW
applications at frequencies up to 200 MHz.
VTSU01900 Features
* Common source configuration, push pull
* Excellent thermal stability, low HCI drift
* Low RDS(on)
* Pb-free, RoHS-compliant
Document Number: VTSU01900 Production Datasheet V1.0
VTSU01900
Drain 1
Gate 2
Source 3
Figure 1. Pin Connection
Table 1. Maximum Ratings Rating
Drain-So
VTSU01900 Applications
* at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications.
* Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10%
Frequency Gp (dB)
POUT (W)
D (%)
120 MHz
20
900
65
* Typical Pe
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